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Proceedings Paper

Resist roughness improvement by a chemical shrink process
Author(s): Tatsuro Nagahara; Takashi Sekito; Yuriko Matsuura
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Paper Abstract

In this paper, we will discuss the improvement of resist pattern roughness on NTD (Negative Tone Development) resist by chemical shrink process. Chemical shrink process is one of the most practical approaches to achieve small feature size CH (Contact Hole) or trench with ArF immersion lithography. We found that this shrink material has not only general benefits of shrink process like DOF (Depth of Focus) margin improvement, but also demonstrates a pattern smoothing effect through observation of the surface of shrink layer using SPM (Scanning Probe Microscope). Additionally, an improvement of LWR (Line Width Roughness) over 16% and an improvement of LCDU (Local Critical Dimension Uniformity) around 60% were observed.

Paper Details

Date Published: 1 April 2016
PDF: 6 pages
Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 97771J (1 April 2016); doi: 10.1117/12.2218402
Show Author Affiliations
Tatsuro Nagahara, Merck Performance Materials Manufacturing G. K. (Japan)
Takashi Sekito, Merck Performance Materials Manufacturing G. K. (Japan)
Yuriko Matsuura, Merck Performance Materials Manufacturing G. K. (Japan)

Published in SPIE Proceedings Vol. 9777:
Alternative Lithographic Technologies VIII
Christopher Bencher, Editor(s)

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