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Proceedings Paper

Low-voltage extended gate organic thin film transistors for ion sensing based on semi-conducting polymer electrodes
Author(s): Shiliang Ji; Qi-Jun Sun; Shishir Venkatesh; Yan Yan; Ye Zhou; Jiaqing Zhuang; Li Zhou; Suting Han; Zong-Xiang Xu; V. A. L. Roy
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Paper Abstract

We report a low-voltage organic field-effect transistor consisting of an extended gate sensory area to detect various ions in a solution. The device distinguishes various ions by the shift in threshold voltage and is sensitive to multiple ions with various concentrations. X-ray photoelectron spectroscopy measurements and the resistance changes at the sensor area prove that the ions are doped into the sensitive film at the sensor area. Because of the effect of doping, the conductivity of the semiconductor polymer film changes thus causing a threshold voltage shift.

Paper Details

Date Published: 27 February 2016
PDF: 8 pages
Proc. SPIE 9749, Oxide-based Materials and Devices VII, 974912 (27 February 2016); doi: 10.1117/12.2218397
Show Author Affiliations
Shiliang Ji, City Univ. of Hong Kong (Hong Kong, China)
Qi-Jun Sun, City Univ. of Hong Kong (Hong Kong, China)
Shishir Venkatesh, City Univ. of Hong Kong (Hong Kong, China)
Yan Yan, City Univ. of Hong Kong (Hong Kong, China)
Ye Zhou, City Univ. of Hong Kong (Hong Kong, China)
Jiaqing Zhuang, City Univ. of Hong Kong (Hong Kong, China)
Li Zhou, City Univ. of Hong Kong (Hong Kong, China)
Suting Han, City Univ. of Hong Kong (Hong Kong, China)
Zong-Xiang Xu, South Univ. of Science and Technology of China (China)
V. A. L. Roy, City Univ. of Hong Kong (Hong Kong, China)


Published in SPIE Proceedings Vol. 9749:
Oxide-based Materials and Devices VII
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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