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Proceedings Paper

Heterogeneously grown tunable group-IV laser on silicon
Author(s): Mantu Hudait; M. Clavel; L. Lester; D. Saladukha; T. Ochalski; F. Murphy-Armando
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Paper Abstract

Tunable tensile-strained germanium (epsilon-Ge) thin films on GaAs and heterogeneously integrated on silicon (Si) have been demonstrated using graded III-V buffer architectures grown by molecular beam epitaxy (MBE). epsilon-Ge epilayers with tunable strain from 0% to 1.95% on GaAs and 0% to 1.11% on Si were realized utilizing MBE. The detailed structural, morphological, band alignment and optical properties of these highly tensile-strained Ge materials were characterized to establish a pathway for wavelength-tunable laser emission from 1.55 μm to 2.1 μm. High-resolution X-ray analysis confirmed pseudomorphic epsilon-Ge epitaxy in which the amount of strain varied linearly as a function of indium alloy composition in the InxGa1-xAs buffer. Cross-sectional transmission electron microscopic analysis demonstrated a sharp heterointerface between the epsilon-Ge and the InxGa1-xAs layer and confirmed the strain state of the epsilon-Ge epilayer. Lowtemperature micro-photoluminescence measurements confirmed both direct and indirect bandgap radiative recombination between the Γ and L valleys of Ge to the light-hole valence band, with L-lh bandgaps of 0.68 eV and 0.65 eV demonstrated for the 0.82% and 1.11% epsilon-Ge on Si, respectively. The highly epsilon-Ge exhibited a direct bandgap, and wavelength-tunable emission was observed for all samples on both GaAs and Si. Successful heterogeneous integration of tunable epsilon-Ge quantum wells on Si paves the way for the implementation of monolithic heterogeneous devices on Si.

Paper Details

Date Published: 13 February 2016
PDF: 11 pages
Proc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII, 97550Y (13 February 2016); doi: 10.1117/12.2218364
Show Author Affiliations
Mantu Hudait, Virginia Polytechnic Institute and State Univ. (United States)
M. Clavel, Virginia Polytechnic Institute and State Univ. (United States)
L. Lester, Virginia Polytechnic Institute and State Univ. (United States)
D. Saladukha, Tyndall National Institute (Ireland)
Cork Institute of Technology (Ireland)
T. Ochalski, Tyndall National Institute (Ireland)
Cork Institute of Technology (Ireland)
F. Murphy-Armando, Tyndall National Institute (Ireland)
Cork Institute of Technology (Ireland)


Published in SPIE Proceedings Vol. 9755:
Quantum Sensing and Nano Electronics and Photonics XIII
Manijeh Razeghi, Editor(s)

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