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Proceedings Paper

Stress-induced pellicle analysis for extreme-ultraviolet lithography
Author(s): Eun-Sang Park; Min-Ha Kim; Sollee Hwang; Jung Hwan Kim; Hye-Keun Oh
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Paper Abstract

The defect on the extreme ultraviolet (EUV) mask can cause image quality degradation on the wafer and also poses a serious problem for achieving high volume manufacturing (HVM). Using a pellicle could decrease the critical size of a defect by taking the defect away from the focal plane of a mask. Considering the double pass transmission for the thickness of extreme ultraviolet lithography EUVL pellicle should be ~ nm thin. For ~ nm thin pellicle, the thermal stress by EUV light exposure may damage the pellicle. Therefore, an investigation of thermal stress is desired for reliable EUV light transmission through pellicle. Therefore, we calculated the total stress and compared with material maximum stress of the pellicle. Breaking or the safety of the pellicle could be determined by the induced total stress, however, the cyclic exposure heating could decrease the material maximum stress of the pellicle. The c-Si (crystalline silicon) has good mechanical durability than the p-Si (poly-crystalline silicon) under cyclic thermal exposure.

Paper Details

Date Published: 18 March 2016
PDF: 5 pages
Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 977626 (18 March 2016); doi: 10.1117/12.2218219
Show Author Affiliations
Eun-Sang Park, Hanyang Univ. (Korea, Republic of)
Min-Ha Kim, Hanyang Univ. (Korea, Republic of)
Sollee Hwang, Hanyang Univ. (Korea, Republic of)
Jung Hwan Kim, Hanyang Univ. (Korea, Republic of)
Hye-Keun Oh, Hanyang Univ. (Korea, Republic of)

Published in SPIE Proceedings Vol. 9776:
Extreme Ultraviolet (EUV) Lithography VII
Eric M. Panning, Editor(s)

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