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Proceedings Paper

Silicon-based phase shifters for high figure of merit in optical modulation
Author(s): Kensuke Ogawa; Kazuhiro Goi; Norihiro Ishikura; Hiroki Ishihara; Shinichi Sakamoto; Tsung-Yang Liow; Xiaoguang Tu; Guo-Qiang Lo; Dim-Lee Kwong; Soon Thor Lim; Min Jie Sun; Ching Eng Png
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Paper Abstract

This paper focuses on latest progress in experimental and theoretical studies on silicon-based carrier-depletion PNjunction phase shifters in terms of high modulation efficiency for energy-efficient photonic networks of high transmission capacity. Modulation efficiency of rib-waveguide phase shifters having various PN-junction configuration are characterized with respect to DC figure of merit defined for phase shifters using carrier-plasma dispersion as the physical principle of refractive-index modulation. In addition, RF drive voltage required for 10-Gb/s on-off keying is characterized for rib-waveguide phase shifters including lateral and vertical PN-junction configurations.

Paper Details

Date Published: 14 March 2016
PDF: 7 pages
Proc. SPIE 9752, Silicon Photonics XI, 975202 (14 March 2016); doi: 10.1117/12.2218184
Show Author Affiliations
Kensuke Ogawa, Fujikura Ltd. (Japan)
Kazuhiro Goi, Fujikura Ltd. (Japan)
Norihiro Ishikura, Fujikura Ltd. (Japan)
Hiroki Ishihara, Fujikura Ltd. (Japan)
Shinichi Sakamoto, Fujikura Ltd. (Japan)
Tsung-Yang Liow, Institute of Microelectronics (Singapore)
Xiaoguang Tu, Institute of Microelectronics (Singapore)
Guo-Qiang Lo, Institute of Microelectronics (Singapore)
Dim-Lee Kwong, Institute of Microelectronics (Singapore)
Soon Thor Lim, Institute of High-Performance Computing (Singapore)
Min Jie Sun, Optic2Connect Pte. Ltd. (Singapore)
Ching Eng Png, Institute of High-Performance Computing (Singapore)


Published in SPIE Proceedings Vol. 9752:
Silicon Photonics XI
Graham T. Reed; Andrew P. Knights, Editor(s)

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