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Proceedings Paper

Comparison study of diffraction based overlay and image based overlay measurements on programmed overlay errors
Author(s): Haiyong Gao; Woong Jae Chung; Nyan Aung; Lokesh Subramany; Pavan Samudrala; Juan-Manuel Gomez
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Paper Abstract

In this paper we will present the comparison study of these two methods on programmed errors of critical layers of 14nm technology node. Programmed OVL errors were made on certain fields during the exposure. Full coverage OVL measurements were performed using both IBO and DBO. Linear, HOPC and iHOPC modeling has been done from non-programmed fields. Then modeling has been subtracted from these certain programmed fields, and Reticle contribution was also calculated and subtracted. In this study, metrology measurement accuracy and stability can be feasible and more accurate OVL control is enabled by selecting better OVL measurement techniques.

Paper Details

Date Published: 8 March 2016
PDF: 8 pages
Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97782Q (8 March 2016); doi: 10.1117/12.2218163
Show Author Affiliations
Haiyong Gao, GLOBALFOUNDRIES (United States)
Woong Jae Chung, GLOBALFOUNDRIES (United States)
Nyan Aung, GLOBALFOUNDRIES (United States)
Lokesh Subramany, GLOBALFOUNDRIES (United States)
Pavan Samudrala, GLOBALFOUNDRIES (United States)
Juan-Manuel Gomez, GLOBALFOUNDRIES (United States)


Published in SPIE Proceedings Vol. 9778:
Metrology, Inspection, and Process Control for Microlithography XXX
Martha I. Sanchez, Editor(s)

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