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Proceedings Paper

Structure release of silicon micro-channel based on wet etching
Author(s): Dandan Cui; Guozheng Wang; Jikai Yang; Haibin Li; Qingduo DuanMu
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Paper Abstract

Based on wet etching theory, the silicon microchannel structure after electrochemical etching was released in TMAH solution to obtain the through-hole microchannel. The silicon wafer with the different resistivity was selected as the substrate of microchannel plate, the TMAH solution was selected in mass concentration of 28.5wt%, and the SiO2 passivation layer with the thickness of 200nm was prepared by thermal oxidation for protection of side-wall of microchannel. Contrary to the problem encountered in wet etching, Firstly, the corrosion characteristics of silicon and SiO2 thin film in TMAH solution were investigated, respectively. In addition, the effects of the pH values of TMAH solution on corrosion characteristics in microstructure releasing of silicon microchannel were studied and analyzed. The experiments show that the silicon wafer with high resistivity can be easily etched, the etching rate of SiO2 film in TMAH is uniform, and adjusting the pH value of etching solution to make it constant during etching can effectively increase the corrosion rate and decrease the surface roughness of samples.

Paper Details

Date Published: 5 November 2015
PDF: 5 pages
Proc. SPIE 9795, Selected Papers of the Photoelectronic Technology Committee Conferences held June–July 2015, 97952H (5 November 2015); doi: 10.1117/12.2217556
Show Author Affiliations
Dandan Cui, Changchun Univ. of Science and Technology (China)
Guozheng Wang, Changchun Univ. of Science and Technology (China)
Jikai Yang, Changchun Univ. of Science and Technology (China)
Haibin Li, Changchun Univ. of Science and Technology (China)
Qingduo DuanMu, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 9795:
Selected Papers of the Photoelectronic Technology Committee Conferences held June–July 2015
Shenggang Liu; Songlin Zhuang; Michael I. Petelin; Libin Xiang, Editor(s)

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