Share Email Print
cover

Proceedings Paper

Photoconductive antennas based on low temperature grown GaAs on silicon substrates for broadband terahertz generation and detection
Author(s): M. Klos; R. Bartholdt; J. Klier; J.-F. Lampin; R. Beigang
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We present investigations of photoconductive antennas (PCA) based on low temperature grown GaAs (LT GaAs) on silicon substrates for terahertz (THz) generation and detection. The PCAs consist of 2 μm thick layers of LT GaAs grown on a high resistivity silicon substrate in order to reduce the intrinsic absorption losses around 8 THz due to a strong phonon resonance in GaAs. Using 20 fs long pump pulses around 800 nm and dipole antennas with dipole lengths between 20 μm and 60 μm a maximum bandwidth up to 12 THz and a maximum dynamic range exceeding 90 dB at 0.5 THz were obtained. The average output power was measured with a calibrated detector to be 95 μW at a repetition rate of 80 MHz.

Paper Details

Date Published: 2 May 2016
PDF: 5 pages
Proc. SPIE 9747, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX, 974712 (2 May 2016); doi: 10.1117/12.2217505
Show Author Affiliations
M. Klos, Technische Univ. Kaiserslautern (Germany)
R. Bartholdt, Photonik-Zentrums Kaiserslautern (Germany)
Technische Univ. Kaiserslautern (Germany)
J. Klier, Fraunhofer-Institut für Physikalische Messtechnik (Germany)
J.-F. Lampin, IEMN, CNRS, Univ. de Lille (France)
R. Beigang, Technische Univ. Kaiserslautern (Germany)


Published in SPIE Proceedings Vol. 9747:
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX
Laurence P. Sadwick; Tianxin Yang, Editor(s)

© SPIE. Terms of Use
Back to Top