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Proceedings Paper

Modeling of ultrashort pulse generation in mode-locked VECSELs
Author(s): I. Kilen; S. W. Koch; J. Hader; J. V. Moloney
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Paper Abstract

We present a study of various models for the mode-locked pulse dynamics in a vertical external-cavity surface emitting laser with a saturable absorber. The semiconductor Bloch equations are used to model microscopically the light-matter interaction and the carrier dynamics. Maxwell’s equations describe the pulse propagation. Scattering contributions due to higher order correlation effects are approximated using effective rates that are found from a comparison to solving the microscopic scattering equations on the second Born-Markov level. It is shown that the simulations result in the same mode-locked final state whether the system is initialized with a test pulse close to the final mode-locked pulse or the full field build-up from statistical noise is considered. The influence of the cavity design is studied. The longest pulses are found for a standard V-cavity while a linear cavity and a V-cavity with an high reflectivity mirror in the middle are shown to produce similar, much shorter pulses.

Paper Details

Date Published: 4 March 2016
PDF: 6 pages
Proc. SPIE 9742, Physics and Simulation of Optoelectronic Devices XXIV, 97420H (4 March 2016); doi: 10.1117/12.2217147
Show Author Affiliations
I. Kilen, The Univ. of Arizona (United States)
S. W. Koch, College of Optical Sciences, The Univ. of Arizona (United States)
Philipps-Univ. Marburg (Germany)
J. Hader, College of Optical Sciences, The Univ. of Arizona (United States)
J. V. Moloney, College of Optical Sciences, The Univ. of Arizona (United States)

Published in SPIE Proceedings Vol. 9742:
Physics and Simulation of Optoelectronic Devices XXIV
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

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