Share Email Print
cover

Proceedings Paper

High Mg content wurtzite phase MgxZn1-xO epitaxial film grown via pulsed-metal organic chemical vapor deposition (PMOCVD)
Author(s): Fikadu Alema; Oleg Ledyaev; Ross Miller; Valeria Beletsky; Brian Hertog; Andrei Osinsky; Winston V. Schoenfeld
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We report on high quality, wurtzite MgxZn1-xO (MgZnO) epitaxial films grown via the PMOCVD method with a record high Mg content up to 51 %. A series of MgZnO films with various Mg content were grown on ZnO (~30 nm)/Al2O3(0001) and ZnO (~30 nm)/AlN (~25 nm)/Al2O3(0001) substrates. The band gap for the films estimated using UV-visible transmission spectroscopy ranges from 3.24 - 4.50 eV, corresponding to the fraction of Mg between x=0.0 to x=0.51, as determined by Rutherford backscattering spectroscopy (RBS). The cathodoluminescence (CL) measurement showed a blue shift in the spectral peak position of MgZnO, indicating an increase in Mg content. No multi-absorption edges and CL band splitting were observed, suggesting the absence of phase segregation in the as grown films. The phase purity and crystal structure of the films were further confirmed by XRD. The absence of phase separation is attributed to the fast periodic transition steps in the PMOCVD, creating a non-equilibrium system where radicals that are formed will have insufficient time to reach their energy minimum. AFM analysis of the films had decreasing surface roughness with increasing Mg content. MSM photodetector was fabricated from the films to characterize the spectral response. The devices exhibit peak response ranging between 276 - 383 nm, covering a large portion of the solar blind spectral window. Moreover, the Schottky barrier was enhanced by treating the MgZnO surface with H2O2, reducing the device’s dark current.

Paper Details

Date Published: 27 February 2016
PDF: 15 pages
Proc. SPIE 9749, Oxide-based Materials and Devices VII, 97490Y (27 February 2016); doi: 10.1117/12.2217139
Show Author Affiliations
Fikadu Alema, Agnitron Technology, Inc. (United States)
Oleg Ledyaev, Agnitron Technology, Inc. (United States)
Ross Miller, Agnitron Technology, Inc. (United States)
Valeria Beletsky, Agnitron Technology, Inc. (United States)
Brian Hertog, Agnitron Technology, Inc. (United States)
Andrei Osinsky, Agnitron Technology, Inc. (United States)
Winston V. Schoenfeld, CREOL, The College of Optics and Photonics, Univ. of Central Florida (United States)


Published in SPIE Proceedings Vol. 9749:
Oxide-based Materials and Devices VII
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

© SPIE. Terms of Use
Back to Top