Share Email Print
cover

Proceedings Paper

Efficient light emission from hybrid inorganic/organic semiconductor structures by energy level optimization
Author(s): R. Schlesinger; F. Bianchi; S. Blumstengel; Björn Kobin; K. Moudgil; S. Barlow; S. Hecht; S. R. Marder; N. Koch
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Innovative hybrid inorganic/organic structures (HIOS) should implement exciton creation by electrical injection in inorganic semiconductors followed by resonant energy transfer and light emission from the organic semiconductor. An inherent obstacle of such designs is the typically unfavorable energy level alignment at HIOS interfaces, which assists in exciton separation thus quenching light emission. Here, we introduce a technologically relevant method to optimize the hybrid structure's energy levels: ZnO and a tailored ladder-type oligophenylene. Using an organometallic donor interlayer the ZnO work function is substantially lowered eliminating the ZnO - L4P-sp3 interfacial energy level offsets enhancing the hybrid structure's radiative emission yield sevenfold.

Paper Details

Date Published: 27 February 2016
PDF: 5 pages
Proc. SPIE 9749, Oxide-based Materials and Devices VII, 974909 (27 February 2016); doi: 10.1117/12.2217006
Show Author Affiliations
R. Schlesinger, Humboldt-Univ. zu Berlin (Germany)
F. Bianchi, Humboldt-Univ. zu Berlin (Germany)
S. Blumstengel, Humboldt-Univ. zu Berlin (Germany)
Björn Kobin, Humboldt-Univ. zu Berlin (Germany)
K. Moudgil, Georgia Institute of Technology (United States)
S. Barlow, Georgia Institute of Technology (United States)
S. Hecht, Humboldt-Univ. zu Berlin (Germany)
S. R. Marder, Georgia Institute of Technology (United States)
N. Koch, Humboldt-Univ. zu Berlin (Germany)
Helmholtz-Zentrum Berlin (Germany)


Published in SPIE Proceedings Vol. 9749:
Oxide-based Materials and Devices VII
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

© SPIE. Terms of Use
Back to Top