Share Email Print
cover

Proceedings Paper

Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework
Author(s): Michele Goano; Francesco Bertazzi; Xiangyu Zhou; Marco Mandurrino; Stefano Dominici; Marco Vallone; Giovanni Ghione; Alberto Tibaldi; Marco Calciati; Pierluigi Debernardi; Fabrizio Dolcini; Fausto Rossi; Giovanni Verzellesi; Matteo Meneghini; Nicola Trivellin; Carlo De Santi; Enrico Zanoni; Enrico Bellotti
Format Member Price Non-Member Price
PDF $17.00 $21.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We discuss some of the key issues to be addressed along the way to complement, and possibly to replace, the standard semiclassical Boltzmann picture with genuine quantum approaches for the simulation of carrier transport and recombination in GaN-based LEDs, with the goal of gradually removing the fitting parameters presently required by semiempirical "quantum corrections" and to better understand the processes responsible for the efficiency droop. As examples of augmented semiclassical models, we present a three-step description of trap-assisted tunneling, especially relevant below the optical turn-on, and a carrier-density-dependent estimate of the phonon-assisted capture rate from bulk states to quantum wells (QWs). Moving to genuine quantum models, we solve the semiconductor Bloch equations to calculate the gain/absorption spectra of AlGaN/GaN QWs, and we discuss our first simulations of spatially and energetically resolved currents across the active region of a single-QW LED based on the nonequilibrium Green’s function approach.

Paper Details

Date Published: 4 March 2016
PDF: 11 pages
Proc. SPIE 9742, Physics and Simulation of Optoelectronic Devices XXIV, 974202 (4 March 2016); doi: 10.1117/12.2216489
Show Author Affiliations
Michele Goano, Politecnico di Torino (Italy)
Francesco Bertazzi, Politecnico di Torino (Italy)
Xiangyu Zhou, Politecnico di Torino (Italy)
Marco Mandurrino, Politecnico di Torino (Italy)
Stefano Dominici, Politecnico di Torino (Italy)
Marco Vallone, Politecnico di Torino (Italy)
Giovanni Ghione, Politecnico di Torino (Italy)
Alberto Tibaldi, Poltecnico di Torino (Italy)
Marco Calciati, Politecnico di Torino (Italy)
Pierluigi Debernardi, Politecnico di Torino (Italy)
Fabrizio Dolcini, Politecnico di Torino (Italy)
Fausto Rossi, Politecnico di Torino (Italy)
Giovanni Verzellesi, Univ. degli Studi di Modena e Reggio Emilia (Italy)
Matteo Meneghini, Univ. degli Studi di Padova (Italy)
Nicola Trivellin, Univ. degli Studi di Padova (Italy)
Carlo De Santi, Univ. degli Studi di Padova (Italy)
Enrico Zanoni, Univ. degli Studi di Padova (Italy)
Enrico Bellotti, Boston Univ. (United States)


Published in SPIE Proceedings Vol. 9742:
Physics and Simulation of Optoelectronic Devices XXIV
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

© SPIE. Terms of Use
Back to Top