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Proceedings Paper

Global space charge effects in ion-beam lithography
Author(s): John J. Petillo; Alfred A. Mondelli
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Paper Abstract

Ion Projection Lithography (IPL) is a candidate technology for meeting expected circuit design rules (less than 0.18 micrometers) for future generations of semiconductor devices. The Advanced Lithography Group (ALG), a consortium of industrial and US government laboratories and universities, is developing IPL technology with funding from ARPA and the state of Maryland. A prototype IPL device, the ALG-1000, is being developed to demonstrate the capability of IPL to meet future requirements for pattern overlay. To realize IPL technology requires control of space charge effects in the ion optical column. Due to the length of the IPL system (several meters), the precision of the calculation to predict distortion at the wafer plane becomes difficult to perform. Including the effects of space charge effects is even more difficult. Both global and stochastic space charge phenomena occur. This paper presents a system of computer models that allows simulations of both global and stochastic space charge effects. In particular, the models will be used on the ion beam projector in the ALG-1000 device. The calculations are carried out using a self-consistent equilibrium ray tracing code, where the applied fields are calculated from the actual lens column geometry. For global space-charge, the model also includes optimization of the lens electrode voltages to minimize pattern distortion at the wafer plane.

Paper Details

Date Published: 25 September 1995
PDF: 8 pages
Proc. SPIE 2522, Electron-Beam Sources and Charged-Particle Optics, (25 September 1995); doi: 10.1117/12.221618
Show Author Affiliations
John J. Petillo, Science Applications International Corp. (United States)
Alfred A. Mondelli, Science Applications International Corp. (United States)


Published in SPIE Proceedings Vol. 2522:
Electron-Beam Sources and Charged-Particle Optics
Eric Munro; Henry P. Freund, Editor(s)

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