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Proceedings Paper

Compensation for rapid contrast variations and correction for charging effects in scanning ion microscopy
Author(s): Sam T. Davies
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Paper Abstract

Focused ion beam systems are now widely used tools at several stages of semiconductor device production and are finding applications in many other areas. Frequently, it is necessary to combine processing by micromachining or microdeposition with the intrinsic scanning ion microscope function of focused ion beam instruments. A problem in so doing is that image quality can change rapidly during processing as a result of changing secondary electron or secondary ion yields. Moreover, when milling insulating materials, charging effects can give rise to both spatial and temporal variations in contrast. This paper describes a method of achieving closed-loop, automated, compensation for image contrast variations which is also applicable to reducing image degradation due to charging effects in scanning ion microscopy.

Paper Details

Date Published: 25 September 1995
PDF: 9 pages
Proc. SPIE 2522, Electron-Beam Sources and Charged-Particle Optics, (25 September 1995); doi: 10.1117/12.221600
Show Author Affiliations
Sam T. Davies, Univ. of Warwick (United Kingdom)

Published in SPIE Proceedings Vol. 2522:
Electron-Beam Sources and Charged-Particle Optics
Eric Munro; Henry P. Freund, Editor(s)

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