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Proceedings Paper

Low-energy focused ion-beam system for direct deposition
Author(s): Masahiro Ueda; Shinji Nagamachi; Yasuhiro Yamakage; Hiromasa Maruno; Junzo Ishikawa
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Paper Abstract

Low energy focused ion beam direct deposition has been developed as a new method for fabricating patterned metal films directly on substrate. The principle of this technique is to perform ion beam deposition by using a very low energy focused ion beam. A low energy focused ion beam system for direct deposition has been designed and constructed. In this system the desired material is ionized, separated from undesired ion species, focused, deflected, and decelerated to the optimum deposition energy. The main components of the system are a liquid metal ion source, a mass filter, two Einzel lenses, double octapole deflectors, and an electrically floating sample stage. The beam energy can be continuously varied from 0 eV to 20 keV for single charged ions. The beam diameter can be tuned between 0.5 and 8 micrometers and the beam current varies from 40 pA to 10 nA corresponding to the beam diameter for Au+ ion in the energy range from 30 eV to 200 eV. The purity of deposited gold film was measured by Auger electron spectroscopy and concentrations of carbon and oxygen were below detection limits. The resistivity of gold film was 3.7 +/- 0.1 (mu) (Omega) cm. Currently, new applications of this deposition method are being developed.

Paper Details

Date Published: 25 September 1995
PDF: 10 pages
Proc. SPIE 2522, Electron-Beam Sources and Charged-Particle Optics, (25 September 1995); doi: 10.1117/12.221597
Show Author Affiliations
Masahiro Ueda, Shimadzu Corp. (Japan)
Shinji Nagamachi, Shimadzu Corp. (Japan)
Yasuhiro Yamakage, Shimadzu Corp. (Japan)
Hiromasa Maruno, Shimadzu Corp. (Japan)
Junzo Ishikawa, Kyoto Univ. (Japan)


Published in SPIE Proceedings Vol. 2522:
Electron-Beam Sources and Charged-Particle Optics
Eric Munro; Henry P. Freund, Editor(s)

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