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Proceedings Paper

Reduced-mode (REM) diodes enable high brightness fiber-coupled modules
Author(s): M. Kanskar; L. Bao; Z. Chen; D. Dawson; M. DeVito; W. Dong; M. Grimshaw; X. Guan; M. Hemenway; K. Kennedy; R. Martinsen; W. Urbanek; S. Zhang
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Paper Abstract

There is an increasing demand for high-power, high-brightness diode lasers from 8xx nm to 9xx nm for applications such as fiber laser pumping, materials processing, solid-state laser pumping, and consumer electronics manufacturing. The kilowatt CW fiber laser pumping (915 nm - 976 nm), in particular, requires the diode lasers to have both high power and high brightness in order to achieve high-performance and reduced manufacturing costs. This paper presents continued progress in the development of high brightness fiber-coupled product platform, elementTM. Further brightness improvement and power-scaling have been enabled by both the rise in chip brightness as well as the increase in number of chips used to couple into a given numerical aperture. We have developed a new generation of high power broad area laser known as reduced-mode diode (REM-diode) which suppresses many of the higher order modes in the slow axis and reduces divergence up to two times at the same operating conditions. To date, we have achieved slow-axis brightness as high as 4.3 W/mm-mrad for devices with thermal resistance of ~2.5 C/W. As a result, we have achieved >75 watts from a 1×6 elementTMin the 9xx nm spectral range; and 177 watts of peak power from a 2×6 elementTM. We have also improved our optics for fiber-coupling which accommodates 7 emitters per polarization in the same numerical aperture. Using this configuration, we project 200 watts of peak power from a 2×7 elementTM with a reliable product at 176 W of power from 105 μm and 0.15 NA fiber. REM-diodes can also be wavelength stabilized using VBGs. The reliability of REM-diodes are equal or better than broad area lasers (BALs). We present current status on ongoing reliability assessment of chip-on-submount.

Paper Details

Date Published: 4 March 2016
PDF: 8 pages
Proc. SPIE 9733, High-Power Diode Laser Technology and Applications XIV, 97330D (4 March 2016); doi: 10.1117/12.2214992
Show Author Affiliations
M. Kanskar, nLIGHT Corp. (United States)
L. Bao, nLIGHT Corp. (United States)
Z. Chen, nLIGHT Corp. (United States)
D. Dawson, nLIGHT Corp. (United States)
M. DeVito, nLIGHT Corp. (United States)
W. Dong, nLIGHT Corp. (United States)
M. Grimshaw, nLIGHT Corp. (United States)
X. Guan, nLIGHT Corp. (United States)
M. Hemenway, nLIGHT Corp. (United States)
K. Kennedy, nLIGHT Corp. (United States)
R. Martinsen, nLIGHT Corp. (United States)
W. Urbanek, nLIGHT Corp. (United States)
S. Zhang, nLIGHT Corp. (United States)


Published in SPIE Proceedings Vol. 9733:
High-Power Diode Laser Technology and Applications XIV
Mark S. Zediker, Editor(s)

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