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Proceedings Paper

High-efficiency bispectral laser source for EUV lithography
Author(s): A. P. Zhevlakov; R. P. Seisyan; V. G. Bespalov; V. V. Elizarov; A. S. Grishkanich; S. V. Kascheev
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Paper Abstract

New concept of EUV radiation power scaling in the intermediate focus of the illumination system is proposed. The multiplex source scheme based on combination of several sources with acceptable level power allows to concentrate EUV light on the total power level of 1kW and more have been developed. The experimental results showed that the power consumption in the double-pulse bi-spectral primary source for EUV lithography can be substantially decrease by replacing pre-amplifiers in power CO2 laser on the SRS converters wavelength 1.06 μm to 10.6 μm while maintaining efficiency of EUV radiation output of illuminated plasma.

Paper Details

Date Published: 14 March 2016
PDF: 10 pages
Proc. SPIE 9735, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXI, 97351F (14 March 2016); doi: 10.1117/12.2214732
Show Author Affiliations
A. P. Zhevlakov, ITMO Univ. (Russian Federation)
R. P. Seisyan, Ioffe Physical-Technical Institute (Russian Federation)
V. G. Bespalov, ITMO Univ. (Russian Federation)
V. V. Elizarov, ITMO Univ. (Russian Federation)
A. S. Grishkanich, ITMO Univ. (Russian Federation)
S. V. Kascheev, ITMO Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 9735:
Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXI
Beat Neuenschwander; Stephan Roth; Costas P. Grigoropoulos; Tetsuya Makimura, Editor(s)

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