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Proceedings Paper

Particle contamination within the tungsten etch back chamber
Author(s): Po-Tao Chu; Kuang-Hui Chang; Tzu-Min Peng; Chao-Hsin Chang; Shih-Why Yen; Ting-hwang Lin; Chaur-Rong Chang
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Paper Abstract

Low yield of dies near the wafer flat edge were observed for the production wafers with tungsten plug structures. All these low yield lots were processed in the specific tungsten etch back etcher (LAM RAINBOW 4720 etcher) and the total yield drop is approximately 30%. The precision cut cross section SEM picture and KLA scanning result indicate the low yield is caused by the particles fallen on the wafer surfaces during and after the tungsten etch back process. The FTIR techniques were utilized to analyze the particle contents. The particle source had been identified to be originated from the thermal degradation and recombination of the grease applied around the gap housing quad seal region in the RAINBOW 4720 etcher. The temperature near the gap housing is 15 degree(s)C higher than the set point. The high temperature environment increase the degradation and recombination reaction rate for the grease and thus generate enormous amount of particles in the etching chamber.

Paper Details

Date Published: 22 September 1995
PDF: 11 pages
Proc. SPIE 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis, (22 September 1995); doi: 10.1117/12.221462
Show Author Affiliations
Po-Tao Chu, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Kuang-Hui Chang, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Tzu-Min Peng, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Chao-Hsin Chang, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Shih-Why Yen, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Ting-hwang Lin, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Chaur-Rong Chang, Taiwan Semiconductor Manufacturing Co. (Taiwan)


Published in SPIE Proceedings Vol. 2635:
Microelectronic Manufacturing Yield, Reliability, and Failure Analysis
Gopal Rao; Massimo Piccoli, Editor(s)

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