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Proceedings Paper

In-situ Si wafer temperature measuring using pulse-modulated infrared laser interferometric thermometry for CVD film deposition
Author(s): Ryo Kurosaki; Jun Kikuchi; Yasuo Kobayashi; Yasuhiko Chinzei; Shuzo Fujimura; Yasuhiro Horiike
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Paper Abstract

Wafer temperature in high rate and low bias RF boltage SiO2 deposition process was monitored by pulse modulated infrared laser interferometric thermometry. With RF bias, wafer temperature sharply rose to more than 600 degree(s)C due to poor thermal conductivity between a silicon wafer and cooling stage which led to no SiO2 deposition on silicon trenches. However, after improving the thermal conductivity, silicon trenches were successfully filled. Also, temperature dependence of fluorocarbon film deposition on a chamber wall in C4F8/H2 inductively coupled plasma process was investigated. The result implies that wall temperature should be controlled over 300 degree(s)C in order to maintain CFx radical supply on SiO2 surfaces.

Paper Details

Date Published: 22 September 1995
PDF: 10 pages
Proc. SPIE 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis, (22 September 1995); doi: 10.1117/12.221454
Show Author Affiliations
Ryo Kurosaki, Fujitsu Ltd. (Japan)
Jun Kikuchi, Fujitsu Ltd. (Japan)
Yasuo Kobayashi, Toyo Univ. (Japan)
Yasuhiko Chinzei, Toyo Univ. (Japan)
Shuzo Fujimura, Fujitsu Ltd. (Japan)
Yasuhiro Horiike, Toyo Univ. (Japan)


Published in SPIE Proceedings Vol. 2635:
Microelectronic Manufacturing Yield, Reliability, and Failure Analysis
Gopal Rao; Massimo Piccoli, Editor(s)

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