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Proceedings Paper

Dynamics of optically-injected semiconductor nanolasers
Author(s): J.-M. Sarraute; K. Schires; S. LaRochelle; F. Grillot
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Paper Abstract

We propose a novel rate equation model of an optically-injected semiconductor nanolaser based on an expression of the complex electric field including a novel spontaneous emission term. The latter takes into account the amplification of the zero-point energy of the field as well as the Purcell effect. The modulation response of the optically injection-locked nanolaser is studied for the first time using a small-signal analysis of the model. We then investigate the injection map of the nanolaser and study the 3-dB bandwidth of the nanolaser inside the locking region.

Paper Details

Date Published: 4 March 2016
PDF: 9 pages
Proc. SPIE 9742, Physics and Simulation of Optoelectronic Devices XXIV, 97420G (4 March 2016); doi: 10.1117/12.2214492
Show Author Affiliations
J.-M. Sarraute, LTCI, CNRS, Télécom ParisTech, Univ. Paris-Saclay (France)
Univ. Laval (Canada)
K. Schires, LTCI, CNRS, Télécom ParisTech, Univ. Paris-Saclay (France)
S. LaRochelle, Univ. Laval (Canada)
F. Grillot, LTCI, CNRS, Télécom ParisTech, Univ. Paris-Saclay (France)
The Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 9742:
Physics and Simulation of Optoelectronic Devices XXIV
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

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