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Proceedings Paper

Effects of various RIE process-induced damages on MOSFET characteristics
Author(s): Byoung Woon Min; L. K. Han; Atul B. Joshi; R. Mann; L. Chung; Dim-Lee Kwong
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Paper Abstract

A systematic study of the degradation of MOSFETs performance and reliability caused by various reactive ion etching (RIE) process steps are conducted. It is found that the polysilicon RIE process significantly increases the electron trapping as an active damage, thus causing higher initial Vt and lower initial Gm of NMOSFETs. In addition, while NMOSFETs with via antenna structures show largest RIE- induced degradation compared to other antenna devices. Our results also indicate Fowler-Nordheim stress results are well correlated with those from hot carrier stressing for monitoring RIE-induced latent damages, suggesting that Fowler-Nordheim stress is an efficient method to monitor RIE damage in a short time.

Paper Details

Date Published: 22 September 1995
PDF: 10 pages
Proc. SPIE 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis, (22 September 1995); doi: 10.1117/12.221446
Show Author Affiliations
Byoung Woon Min, Univ. of Texas/Austin (United States)
L. K. Han, Univ. of Texas/Austin (United States)
Atul B. Joshi, Rockwell Telecommunications (United States)
R. Mann, Rockwell Telecommunications (United States)
L. Chung, Rockwell Telecommunications (United States)
Dim-Lee Kwong, Univ. of Texas/Austin (United States)


Published in SPIE Proceedings Vol. 2635:
Microelectronic Manufacturing Yield, Reliability, and Failure Analysis
Gopal Rao; Massimo Piccoli, Editor(s)

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