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Proceedings Paper

Towards p × n transverse thermoelectrics: extreme anisotropic conduction in bulk doped semiconductor thin films via proton implantation
Author(s): Yang Tang; G. Koblmüller; H. Riedl; M. Grayson
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Paper Abstract

Transverse thermoelectrics promise entirely new strategies for integrated cooling elements for optoelectronics. The recently introduced p × n-type transverse thermoelectric paradigm indicates that the most important step to engineering artificial transverse thermoelectrics is to create alternate p- and n-doped layers with orthogonally oriented anisotropic conductivity. This paper studies an approach to creating extreme anisotropic conductivity in bulk-doped semiconductor thin films via ion implantation. This approach defines an array of parallel conduction channels with photolithographic patterning of an SiO2 mask layer, followed by proton implantation. With a 10 μm channel width and 20 μm pitch, both n-type and p-type Al0.42 Ga0.58As thin films demonstrate a conductivity anisotropy ratio σ /σ⊥ > 104 at room temperature, while the longitudinal resistivity along the channel direction after implantation only increased by a factor of 3.3 ∼ 3.6. This approach can be readily adapted to other semiconductor materials for artificial p × n-type transverse thermoelectrics as other applications.

Paper Details

Date Published: 7 March 2016
PDF: 7 pages
Proc. SPIE 9765, Optical and Electronic Cooling of Solids, 976508 (7 March 2016); doi: 10.1117/12.2214448
Show Author Affiliations
Yang Tang, Northwestern Univ. (United States)
G. Koblmüller, Technische Univ. München (Germany)
H. Riedl, Technische Univ. München (Germany)
M. Grayson, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 9765:
Optical and Electronic Cooling of Solids
Richard I. Epstein; Denis V. Seletskiy; Mansoor Sheik-Bahae, Editor(s)

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