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Proceedings Paper

Highly reliable CVD-stacked oxynitride gate dielectric fabricated by in-situ rapid thermal multiprocessing
Author(s): Jason Yan; L. K. Han; Dim-Lee Kwong
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Paper Abstract

High-quality CVD stacked oxynitride gate dielectrics have been fabricated by in-situ rapid thermal multiprocessing. Bottom thin oxynitrides were formed by RTP of Si in the NO or N2O ambient, followed by RT-CVD deposition of SiO2 films using SiH4 and N2O. The stacked dielectrics were then subjected to in-situ rapid thermal annealing in an O2 ambient. Results show that CVD stacked oxynitride gate dielectrics have improved endurance to interface state degradation, higher charge to breakdown values, and significantly reduced defect densities compared to control thermal gate oxide.

Paper Details

Date Published: 22 September 1995
PDF: 6 pages
Proc. SPIE 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis, (22 September 1995); doi: 10.1117/12.221440
Show Author Affiliations
Jason Yan, Univ. of Texas/Austin (United States)
L. K. Han, Univ. of Texas/Austin (United States)
Dim-Lee Kwong, Univ. of Texas/Austin (United States)


Published in SPIE Proceedings Vol. 2635:
Microelectronic Manufacturing Yield, Reliability, and Failure Analysis
Gopal Rao; Massimo Piccoli, Editor(s)

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