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Proceedings Paper

Photoelectron thermalization near the unpinned surface of GaAs(Cs,O) photocathode
Author(s): Alexander S. Terekhov; Dmitri A. Orlov
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Paper Abstract

The longitudinal component of the photoelectron energy distribtuion from a transmission mode GaAs photocathode with quantum efficiency up to 18% is accurately measaured by using Generation III image intensifier as a parallel plates retarding field electron energy analyzer. The measurements are performed within the temperature range of 77-300 K with different photon energies for photoelectron excitation above or below the band gap of semiconductor. It is shown that conduction band tails in heavily doped GaAs influence photoelectron transport near the surface during the process of emission into vacuum. The transmission coefficient of a residual surface barrier is measured as a function of electron kinetic energy above the conduction band minima and is found to be much less than unity. The obtained results demonstrate the usefulness of this technique for the investigation of the physical factors which control the quantum efficiency and other parameters of photocathodes with neagitive electron affinity.

Paper Details

Date Published: 26 September 1995
PDF: 8 pages
Proc. SPIE 2550, Photodetectors and Power Meters II, (26 September 1995); doi: 10.1117/12.221427
Show Author Affiliations
Alexander S. Terekhov, Institute of Semiconductor Physics (Russia)
Dmitri A. Orlov, Institute of Semiconductor Physics (Russia)


Published in SPIE Proceedings Vol. 2550:
Photodetectors and Power Meters II
Kathleen Muray; Kenneth J. Kaufmann, Editor(s)

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