Share Email Print
cover

Proceedings Paper

Gain compression effect on the modulation dynamics of an optically injection-locked semiconductor laser using gain lever
Author(s): J.-M. Sarraute; K. Schires; S. LaRochelle; F. Grillot
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The modulation response of an optically-injected gain lever semiconductor laser is studied and calculations show that a gain-lever laser operating under medium to strong optical injection provides a unique and robust configuration for ultra large bandwidth enhancement. Modulation bandwidths above nine times the relaxation oscillation frequency of the free-running laser can be reached using injection-locking conditions that are reasonable for practical applications. The impact of the gain compression on the modulation dynamic is discussed for the first time. This work is of prime importance for the development of directly-modulated broadband optical sources for high-speed operation at 40 Gbps and beyond.

Paper Details

Date Published: 4 March 2016
PDF: 8 pages
Proc. SPIE 9742, Physics and Simulation of Optoelectronic Devices XXIV, 97420E (4 March 2016); doi: 10.1117/12.2214244
Show Author Affiliations
J.-M. Sarraute, LTCI, CNRS, Télécom ParisTech, Univ. Paris-Saclay (France)
Univ. Laval (Canada)
K. Schires, LTCI, CNRS, Télécom ParisTech, Univ. Paris-Saclay (France)
S. LaRochelle, Univ. Laval (Canada)
F. Grillot, LTCI, CNRS, Télécom ParisTech, Univ. Paris-Saclay (France)
The Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 9742:
Physics and Simulation of Optoelectronic Devices XXIV
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

© SPIE. Terms of Use
Back to Top