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Proceedings Paper

Comparison of hydrodynamic and drift diffusion models as applied to interdigitated metal-semiconductor-metal photodetectors
Author(s): Ali F. Salem; Arlynn W. Smith; Kevin F. Brennan
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Paper Abstract

In this paper, we discuss the range of applicability of the drift-diffusion and hydrodynamic models as applied to the study of interdigitated metal-semiconductor-metal photodetectors. The hydrodynamic model is an extension of the standard drift-diffusion technique which determines the electon and hole energies in addition to the carrier concentrations and potential. The hydrodynamic method can properly account for energy dependent phenomena such as nonstationary transport phenomena and thermionic emission currents. The key engineering figure of merit, the time response, is calculated and compared using both models for a 1D device design that closely mimics an InGaAs/AlInAs metal-semiconductor-metal device. Structures incorporating heterobarriers and blocking contacts, wherein differences between the energy dependent and independent models are expected to occur, are examined.

Paper Details

Date Published: 26 September 1995
PDF: 10 pages
Proc. SPIE 2550, Photodetectors and Power Meters II, (26 September 1995); doi: 10.1117/12.221405
Show Author Affiliations
Ali F. Salem, Georgia Institute of Technology (United States)
Arlynn W. Smith, Georgia Institute of Technology (United States)
Kevin F. Brennan, Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 2550:
Photodetectors and Power Meters II
Kathleen Muray; Kenneth J. Kaufmann, Editor(s)

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