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Proceedings Paper

Smart detectors: devices, integration, circuits, and systems
Author(s): Nan Marie Jokerst; Martin A. Brooke; Olivier Vendier; Myunghee Lee; Suzanne M. Fike; Brent Buchanan; D. Scott Wills
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Paper Abstract

The fabrication and performance of thin film p-i-n and metal-semiconductor-metal (MSM) photodetectors and the integration of these detectors onto silicon circuitry is presented. The thin film photodetectors are separated from the growth substrate using epitaxial lift off or total substrate removal, and are subsequently bonded to silicon circuits. Performance of the thin film photodetectors is comparable to on-wafer counterparts, and in the cases of resonant cavity p-i-ns and inverted (fingers on the bottom) MSMs, the performance is enhanced through the removal of the substrate. Receiver circuits have been designed, integrated with thin film photodetectors, and tested. Finally, smart pixel arrays of photodetectors have been integrated directly on top of an array of silicon oscillator circuits to demonstrate three dimensionally interconnected image processing systems.

Paper Details

Date Published: 26 September 1995
PDF: 12 pages
Proc. SPIE 2550, Photodetectors and Power Meters II, (26 September 1995); doi: 10.1117/12.221402
Show Author Affiliations
Nan Marie Jokerst, Georgia Institute of Technology (United States)
Martin A. Brooke, Georgia Institute of Technology (United States)
Olivier Vendier, Georgia Institute of Technology (United States)
Myunghee Lee, Georgia Institute of Technology (United States)
Suzanne M. Fike, Georgia Institute of Technology (United States)
Brent Buchanan, Georgia Institute of Technology (United States)
D. Scott Wills, Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 2550:
Photodetectors and Power Meters II
Kathleen Muray; Kenneth J. Kaufmann, Editor(s)

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