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Proceedings Paper

Cavity enhanced 1.5μm LED with silicon as a hole injector
Author(s): Dong Liu; Zhenyang Xia; SangJune Cho; Deyin Zhao; Huilong Zhang; Tzu-Hsuan Chang; Xin Yin; Munho Kim; Jung-Hun Seo; Jaeseong Lee; Xudong Wang; Weidong Zhou; Zhenqiang Ma
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Paper Abstract

Here we report the demonstration of a Si/InAlGaAs/InP PIN cavity enhanced LED around 1.5 um by using membrane transfer method. The silicon layer is acting not only as the optical guiding layer but also the hole injection layer. The new hybrid integrated LED could be further developed as laser source for silicon photonics.

Paper Details

Date Published: 7 March 2016
PDF: 6 pages
Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97670Y (7 March 2016); doi: 10.1117/12.2213957
Show Author Affiliations
Dong Liu, Univ. of Wisconsin-Madison (United States)
Zhenyang Xia, Univ. of Wisconsin-Madison (United States)
SangJune Cho, Univ. of Wisconsin-Madison (United States)
Deyin Zhao, The Univ. of Texas at Arlington (United States)
Huilong Zhang, Univ. of Wisconsin-Madison (United States)
Tzu-Hsuan Chang, Univ. of Wisconsin-Madison (United States)
Xin Yin, Univ. of Wisconsin-Madison (United States)
Munho Kim, Univ. of Wisconsin-Madison (United States)
Jung-Hun Seo, Univ. of Wisconsin-Madison (United States)
Jaeseong Lee, Univ. of Wisconsin-Madison (United States)
Xudong Wang, Univ. of Wisconsin-Madison (United States)
Weidong Zhou, The Univ. of Texas at Arlington (United States)
Zhenqiang Ma, Univ. of Wisconsin-Madison (United States)


Published in SPIE Proceedings Vol. 9767:
Novel In-Plane Semiconductor Lasers XV
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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