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Proceedings Paper

Structural and optical properties of GaAs quantum dots grown on GaP (001)
Author(s): S. Dadgostar; A. Torres; O. Martinez; J. Jimenez; J. Schmidtbauer; T. Boeck; A. Mogilatenko; W. T. Masselink; F. Hatami
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Paper Abstract

We describe the structural and optical properties of GaAs quantum dots grown on GaP (001) substrates using gas-source molecular-beam epitaxy. The 3.6% lattice mismatch results in the formation of quantum dots in the Stranski– Krastanowmode for GaAs nominal coverage above 1.2 ML. The average lateral size and height of dots change from 17and 0.9 nm to 35 and 2 nm for 1.8 to 3.6 ML GaAs coverage. However, most samples show in a multimodal size distribution. The areal density of the QDs is between600 and 800μm-2. Samples with the GaAs nominal coverage in the range of 1.2 – 3.6 ML emit light between 1.7 and 2.1eV. Emission spectra from QDs samples are broad and consisting two peaks, whereas the spectrum of the QW sample exhibits one peak. With increasing the GaAs nominal coverage, the overall luminescence shifts toward lower energy and the output intensity increases. Samplescontaining 2.7 and 3.6 ML GaAs emit light up to room temperature.

Paper Details

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Proc. SPIE 9758, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII, 975805; doi: 10.1117/12.2213953
Show Author Affiliations
S. Dadgostar, Humboldt-Univ. zu Berlin (Germany)
A. Torres, Univ. de Valladolid (Spain)
O. Martinez, Univ. de Valladolid (Spain)
J. Jimenez, Univ. de Valladolid (Spain)
J. Schmidtbauer, Leibniz-Institut für Kristallzüchtung (Germany)
T. Boeck, Leibniz-Institut für Kristallzüchtung (Germany)
A. Mogilatenko, Humboldt-Univ. zu Berlin (Germany)
W. T. Masselink, Humboldt-Univ. zu Berlin (Germany)
F. Hatami, Humboldt-Univ. zu Berlin (Germany)


Published in SPIE Proceedings Vol. 9758:
Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII
Diana L. Huffaker; Holger Eisele; Kimberly A. Dick, Editor(s)

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