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Proceedings Paper

Optical investigation of microscopic defect distribution in semi-polar (1-101 and 11-22) InGaN light-emitting diodes
Author(s): Shopan Hafiz; Nicolas Andrade; Morteza Monavarian; Natalia Izyumskaya; Saikat Das; Fan Zhang; Vitaliy Avrutin; Hadis Morkoç; Ümit Özgür
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Paper Abstract

Near-field scanning optical microscopy was applied to investigate the spatial variations of extended defects and their effects on the optical quality for semi-polar (1-101) and (11-22) InGaN light emitting diodes (LEDs). (1-101) and (11-22) oriented InGaN LEDs emitting at 450-470 nm were grown on patterned Si (001) 7° offcut substrates and m-sapphire substrates by means of nano-epitaxial lateral overgrowth (ELO), respectively. For (1-101) structures, the photoluminescence (PL) at 85 K from the near surface c+ wings was found to be relatively uniform and strong across the sample. However, emission from the c- wings was substantially weaker due to the presence of high density of threading dislocations (TDs) and basal plane stacking faults (BSFs) as revealed from the local PL spectra. In case of (11-22) LED structures, near-field PL intensity correlated with the surface features and the striations along the direction parallel to the c-axis projection exposed facets where the Indium content was higher as deduced from shift in the PL peak energy.

Paper Details

Date Published: 26 February 2016
PDF: 6 pages
Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974828 (26 February 2016); doi: 10.1117/12.2213908
Show Author Affiliations
Shopan Hafiz, Virginia Commonwealth Univ. (United States)
Nicolas Andrade, Virginia Commonwealth Univ. (United States)
Morteza Monavarian, Virginia Commonwealth Univ. (United States)
Natalia Izyumskaya, Virginia Commonwealth Univ (United States)
Saikat Das, Virginia Commonwealth Univ. (United States)
Fan Zhang, Virginia Commonwealth Univ. (United States)
Vitaliy Avrutin, Virginia Commonwealth Univ. (United States)
Hadis Morkoç, Virginia Commonwealth Univ. (United States)
Ümit Özgür, Virginia Commonwealth Univ. (United States)


Published in SPIE Proceedings Vol. 9748:
Gallium Nitride Materials and Devices XI
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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