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Proceedings Paper

A CMOS image sensor using high-speed lock-in pixels for stimulated Raman scattering
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Paper Abstract

A CMOS image sensor using high-speed lock-in pixels for stimulated Raman scattering (SRS) spectroscopy is presented in this paper. The effective SRS signal from the stimulated emission of SRS mechanism is very small in contrast to the offset of a probing laser source, which is in the ratio of 10-4 to 10-5. In order to extract this signal, the common offset component is removed, and the small difference component is sampled using switched-capacitor integrator with a fully differential amplifier. The sampling is performed over many integration cycles to achieve appropriate amplification. The lock-in pixels utilizes high-speed lateral electric field charge modulator (LEFM) to demodulate the SRS signal which is modulated at high-frequency of 20MHz. A prototype chip is implemented using 0.11μm CMOS image sensor technology.

Paper Details

Date Published: 7 March 2016
PDF: 7 pages
Proc. SPIE 9720, High-Speed Biomedical Imaging and Spectroscopy: Toward Big Data Instrumentation and Management, 97200J (7 March 2016); doi: 10.1117/12.2213906
Show Author Affiliations
DeXing Lioe, Shizuoka Univ. (Japan)
Kamel Mars, Shizuoka Univ. (Japan)
Taishi Takasawa, Shizuoka Univ. (Japan)
Keita Yasutomi, Shizuoka Univ. (Japan)
Keiichiro Kagawa, Shizuoka Univ. (Japan)
Mamoru Hashimoto, Osaka Univ. (Japan)
Shoji Kawahito, Shizuoka Univ. (Japan)


Published in SPIE Proceedings Vol. 9720:
High-Speed Biomedical Imaging and Spectroscopy: Toward Big Data Instrumentation and Management
Kevin K. Tsia; Keisuke Goda, Editor(s)

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