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Proceedings Paper

Extrinsic semiconductor low-background infrared field-effect transistor of a new type
Author(s): Nicolas B. Zaletaev; Vasily F. Kocherov
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Paper Abstract

An extrinsic semiconductor IR field-effect transistor of a new type has been developed and studied. It operates in a spectral range corresponding to its bulk material extrinsic photoresponsivity and possesses a quantum efficiency on the order of that of the same material photoconductor detectors. Its principle of operation is based on the variation of the near- contact electric field on a change in the concentration of free charge carriers in the bulk. A low-frequency current responsivity of 106-107 A/W for experimental SI:Ga samples has been attained under a background intensity of 1011 cm-2s-1. The low-frequency responsivity changes in inverse proportion to the level of background and can achieve a very high value with a decrease in it. The 3-dB cutoff frequency of photoresponse is close to the cutoff frequency of the low- frequency photoresponse plateau for the similar photoconductor detectors. A physical model has been developed which makes it possible to carry out approximate designing of such devices. Experimental samples of 16-element phototransistor linear arrays have been developed.

Paper Details

Date Published: 29 September 1995
PDF: 12 pages
Proc. SPIE 2553, Infrared Spaceborne Remote Sensing III, (29 September 1995); doi: 10.1117/12.221389
Show Author Affiliations
Nicolas B. Zaletaev, Research, Development, and Production Ctr. ORION (Russia)
Vasily F. Kocherov, Research, Development, and Production ORION (Russia)


Published in SPIE Proceedings Vol. 2553:
Infrared Spaceborne Remote Sensing III
Marija Strojnik; Bjorn F. Andresen, Editor(s)

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