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Proceedings Paper

Wurtzite/zinc-blende electronic-band alignment in basal-plane stacking faults in semi-polar GaN
Author(s): Morteza Monavarian; Shopan Hafiz; Natalia Izyumskaya; Saikat Das; Ümit Özgür; Hadis Morkoç; Vitaliy Avrutin
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Paper Abstract

Heteroepitaxial semipolar and nonpolar GaN layers often suffer from high densities of extended defects including basal plane stacking faults (BSFs). BSFs which are considered as inclusions of cubic zinc-blende phase in wurtzite matrix act as quantum wells strongly affecting device performance. Band alignment in BSFs has been discussed as type of band alignment at the wurtzite/zinc blende interface governs the response in differential transmission; fast decay after the pulse followed by slow recovery due to spatial splitting of electrons and heavy holes for type- II band alignment in contrast to decay with no recovery in case of type I band alignment. Based on the results, band alignment is demonstrated to be of type II in zinc-blende segments in wurtzite matrix as in BSFs.

Paper Details

Date Published: 26 February 2016
PDF: 11 pages
Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974827 (26 February 2016); doi: 10.1117/12.2213859
Show Author Affiliations
Morteza Monavarian, Virginia Commonwealth Univ. (United States)
Shopan Hafiz, Virginia Commonwealth Univ. (United States)
Natalia Izyumskaya, Virginia Commonwealth Univ. (United States)
Saikat Das, Virginia Commonwealth Univ (United States)
Ümit Özgür, Virginia Commonwealth Univ. (United States)
Hadis Morkoç, Virginia Commonwealth Univ. (United States)
Vitaliy Avrutin, Virginia Commonwealth Univ. (United States)


Published in SPIE Proceedings Vol. 9748:
Gallium Nitride Materials and Devices XI
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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