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Proceedings Paper

Fully transparent thin film transistors based on zinc oxide channel layer and molybdenum doped indium oxide electrodes
Author(s): Mateusz Mądzik; Elangovan Elamurugu; Jaime Viegas
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Paper Abstract

In this work we report the fabrication of thin film transistors (TFT) with zinc oxide channel and molybdenum doped indium oxide (IMO) electrodes, achieved by room temperature sputtering. A set of devices was fabricated, with varying channel width and length from 5μm to 300μm. Output and transfer characteristics were then extracted to study the performance of thin film transistors, namely threshold voltage and saturation current, enabling to determine optimal fabrication process parameters. Optical transmission in the UV-VIS-IR are also reported.

Paper Details

Date Published: 7 March 2016
PDF: 6 pages
Proc. SPIE 9770, Advances in Display Technologies VI, 97700H (7 March 2016); doi: 10.1117/12.2213850
Show Author Affiliations
Mateusz Mądzik, Masdar Institute of Science and Technology (United Arab Emirates)
Elangovan Elamurugu, Masdar Institute of Science and Technology (United Arab Emirates)
Jaime Viegas, Masdar Institute of Science and Technology (United Arab Emirates)


Published in SPIE Proceedings Vol. 9770:
Advances in Display Technologies VI
Liang-Chy Chien; Sin-Doo Lee; Ming Hsien Wu, Editor(s)

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