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Proceedings Paper

Exciton localization in (11-22)-oriented semi-polar InGaN multiple quantum wells
Author(s): Morteza Monavarian; Daniel Rosales; Bernard Gil; Natalia Izyumskaya; Saikat Das; Ümit Özgür; Hadis Morkoç; Vitaliy Avrutin
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Paper Abstract

Excitonic recombination dynamics in (11-22) -oriented semipolar In0.2Ga0.8N/In0.06Ga0.94N multiquantum wells (MQWs) grown on GaN/m-sapphire templates have been investigated by temperature-dependent time-resolved photoluminescence (TRPL). The radiative and nonradiative recombination contributions to the PL intensity at different temperatures were evaluated by analysing temperature dependences of PL peak intensity and decay times. The obtained data indicate the existence of exciton localization with a localization energy of Eloc(15K) =7meV and delocalization temperature of Tdeloc = 200K in the semipolar InGaN MQWs. Presence of such exciton localization in semipolar (11-22) -oriented structures could lead to improvement of excitonic emission and internal quantum efficiency.

Paper Details

Date Published: 26 February 2016
PDF: 14 pages
Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974826 (26 February 2016); doi: 10.1117/12.2213835
Show Author Affiliations
Morteza Monavarian, Virginia Commonwealth Univ. (United States)
Daniel Rosales, Univ. Montpellier 2 (France)
Bernard Gil, Univ. Montpellier 2 (France)
Natalia Izyumskaya, Virginia Commonwealth Univ. (United States)
Saikat Das, Virginia Commonwealth Univ. (United States)
Ümit Özgür, Virginia Commonwealth Univ. (United States)
Hadis Morkoç, Virginia Commonwealth Univ. (United States)
Vitaliy Avrutin, Virginia Commonwealth Univ. (United States)


Published in SPIE Proceedings Vol. 9748:
Gallium Nitride Materials and Devices XI
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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