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Proceedings Paper

Enhancement of indium incorporation to InGaN MQWs on AlN/GaN periodic multilayers
Author(s): Morteza Monavarian; Shopan Hafiz; Saikat Das; Natalia Izyumskaya; Ümit Özgür; Hadis Morkoç; Vitaliy Avrutin
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Paper Abstract

The effect of compressive strain in buffer layer on strain relaxation and indium incorporation in InGaN multi-quantum wells (MQWs) is studied for two sets of samples grown side by side on both relaxed GaN layers and strained 10-pairs of AlN/GaN periodic multilayers. The 14-nm AlN layers were utilized in both multilayers, while GaN thickness was 4.5 and 2.5 nm in the first and the second set, respectively. The obtained results for the InGaN active layers on relaxed GaN and AlN/GaN periodic multilayers indicate enhanced indium incorporation for more relaxed InGaN active layers providing a variety of emission colors from purple to green.

Paper Details

Date Published: 26 February 2016
PDF: 15 pages
Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974825 (26 February 2016); doi: 10.1117/12.2213777
Show Author Affiliations
Morteza Monavarian, Virginia Commonwealth Univ. (United States)
Shopan Hafiz, Virginia Commonwealth Univ. (United States)
Saikat Das, Virginia Commonwealth Univ (United States)
Natalia Izyumskaya, Virginia Commonwealth Univ (United States)
Ümit Özgür, Virginia Commonwealth Univ. (United States)
Hadis Morkoç, Virginia Commonwealth Univ. (United States)
Vitaliy Avrutin, Virginia Commonwealth Univ. (United States)


Published in SPIE Proceedings Vol. 9748:
Gallium Nitride Materials and Devices XI
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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