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Proceedings Paper

Tunable, full-color nanowire light emitting diode arrays monolithically integrated on Si and sapphire
Author(s): Renjie Wang; Yong-Ho Ra; Yuanpeng Wu; Songrui Zhao; Hieu P. T. Nguyen; Ishiang Shih; Zetian Mi
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Paper Abstract

The monolithic integration of red, green and blue (RGB) GaN-based light-emitting diodes (LEDs) directly on a single chip is critically important for smart lighting and full color display applications. In this work, RGB InGaN/GaN dot-in-a-wire LED arrays were laterally arranged on a Si wafer using a three-step SiOx-mask selective area growth (SAG) technique, and on a sapphire wafer using a Ti-mask SAG technique. Tunable emission across the entire visible spectral range (~ 450 nm to 700 nm) can be readily achieved on a single Si wafer by varying the sizes and/or compositions of the dots. By separately biasing lateral-arranged multi-color LED subpixels, the correlated color temperature (CCT) values of such a ~ 0.016 mm2 pixel can be varied from ~ 1900 K to 6800 K. The RGB pixel size can be further reduced by using the Ti-mask SAG technique on sapphire wafer. Full-color InGaN/GaN nanowire arrays with sizes of 2.8 × 2.8 μm2 have been monolithically fabricated into the same pixel.

Paper Details

Date Published: 26 February 2016
PDF: 9 pages
Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 97481S (26 February 2016); doi: 10.1117/12.2213741
Show Author Affiliations
Renjie Wang, McGill Univ. (Canada)
Yong-Ho Ra, McGill Univ. (Canada)
Yuanpeng Wu, McGill Univ. (Canada)
Songrui Zhao, McGill Univ. (Canada)
Hieu P. T. Nguyen, McGill Univ. (Canada)
Ishiang Shih, McGill Univ. (Canada)
Zetian Mi, McGill Univ. (Canada)


Published in SPIE Proceedings Vol. 9748:
Gallium Nitride Materials and Devices XI
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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