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Proceedings Paper

1.8-μm thulium microlasers integrated on silicon
Author(s): Jonathan D. B. Bradley; Zhan Su; E. Salih Magden; Nanxi Li; Matthew Byrd; Purnawirman P.; Thomas N. Adam; Gerald Leake; Douglas Coolbaugh; Michael R. Watts
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Paper Abstract

A key challenge for silicon photonic systems is the development of compact on-chip light sources. Thulium-doped fiber and waveguide lasers have recently generated interest for their highly efficient emission around 1.8 μm, a wavelength range also of growing interest to silicon-chip based systems. Here, we report on highly compact and low-threshold thulium-doped microcavity lasers integrated with silicon-compatible silicon nitride bus waveguides. The 200-μmdiameter thulium microlasers are enabled by a novel high quality-factor (Q-factor) design, which includes two silicon nitride layers and a silicon dioxide trench filled with thulium-doped aluminum oxide. Similar, passive (undoped) microcavity structures exhibit Q-factors as high as 5.7 × 105 at 1550 nm. We show lasing around 1.8–1.9 μm in aluminum oxide microcavities doped with 2.5 × 1020 cm−3 thulium concentration and under resonant pumping around 1.6 μm. At optimized microcavity-waveguide gap, we observe laser thresholds as low as 773 μW and slope efficiencies as high as 23.5%. The entire fabrication process, including back-end deposition of the gain medium, is silicon-compatible and allows for co-integration with other silicon-based photonic devices for applications such as communications and sensing.

Paper Details

Date Published: 24 February 2016
PDF: 6 pages
Proc. SPIE 9744, Optical Components and Materials XIII, 97440U (24 February 2016); doi: 10.1117/12.2213678
Show Author Affiliations
Jonathan D. B. Bradley, Massachusetts Institute of Technology (United States)
McMaster Univ. (Canada)
Zhan Su, Massachusetts Institute of Technology (United States)
E. Salih Magden, Massachusetts Institute of Technology (United States)
Nanxi Li, Massachusetts Institute of Technology (United States)
Harvard Univ. (United States)
Matthew Byrd, Massachusetts Institute of Technology (United States)
Purnawirman P., Massachusetts Institute of Technology (United States)
Thomas N. Adam, State Univ. of New York (United States)
Gerald Leake, State Univ. of New York (United States)
Douglas Coolbaugh, State Univ. of New York (United States)
Michael R. Watts, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 9744:
Optical Components and Materials XIII
Shibin Jiang; Michel J. F. Digonnet, Editor(s)

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