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Proceedings Paper

Ultrafast characterization of semiconductor gain and absorber devices for mode-locked VECSELs
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Paper Abstract

We present a comprehensive characterization of semiconductor gain and absorber devices utilizing novel measurement techniques. Using a 20fs probe laser, a time resolution in the few femtosecond range is achieved in traditional pump and probe measurements performed on VECSELs and SESAMs. In-situ characterizations of VECSEL samples mode-locked in the sub-500fs regime reveal the fast and longtime recoveries of the gain present in real lasing conditions. Spectrally-resolved probing gives further information about the properties of carriers in VECSEL gain media. Our results indicate that stable mode-locked operation is sustained by multiple carrier relaxation mechanisms ranging from a few femtoseconds to the pico- and nanosecond regimes.

Paper Details

Date Published: 10 March 2016
PDF: 6 pages
Proc. SPIE 9734, Vertical External Cavity Surface Emitting Lasers (VECSELs) VI, 97340K (10 March 2016); doi: 10.1117/12.2213671
Show Author Affiliations
Caleb Baker, College of Optical Sciences, The Univ. of Arizona (United States)
Maik Scheller, College of Optical Sciences, The Univ. of Arizona (United States)
Hwang-Jye Yang, College of Optical Sciences, The Univ. of Arizona (United States)
Stephan W. Koch, College of Optical Sciences, The Univ. of Arizona (United States)
Philipps-Univ. Marburg (Germany)
Ronald J. Jones, College of Optical Sciences, The Univ. of Arizona (United States)
Jerome V. Moloney, College of Optical Sciences, The Univ. of Arizona (United States)
Antje Ruiz Perez, College of Optical Sciences, The Univ. of Arizona (United States)
Wolfgang Stolz, College of Optical Sciences, The Univ. of Arizona (United States)
Sadhvikas Addamane, The Univ. of New Mexico (United States)
Ganesh Balakrishnan, The Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 9734:
Vertical External Cavity Surface Emitting Lasers (VECSELs) VI
Keith G. Wilcox, Editor(s)

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