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Proceedings Paper

Frequency conversion in free-standing periodically oriented gallium nitride
Author(s): Christopher G. Brown; Steven R. Bowman; Jennifer K. Hite; Jaime A. Freitas; Francis J. Kub; Charles R. Eddy; Igor Vurgaftman; Jerry R. Meyer; Jacob H. Leach; Kevin Udwary
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Paper Abstract

Gallium nitride’s (GaN) material properties of broadband transparency, high thermal conductivity, and wide-band gap make it a promising candidate for high-power frequency conversion devices. The strong internal polarization of GaN leads to large second-order nonlinearity, but conventional phase matching is prevented due to weak birefringence. To obtain efficient nonlinear optic frequency conversion, patterned inversion growth has been developed to induce quasiphase matching (QPM). We have fabricated and tested periodically oriented GaN (PO-GaN) devices to obtain QPM frequency conversion. This report discusses our recent measurements of second harmonic generation resonances for these devices.

Paper Details

Date Published: 18 March 2016
PDF: 6 pages
Proc. SPIE 9731, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications XV, 97310E (18 March 2016); doi: 10.1117/12.2213447
Show Author Affiliations
Christopher G. Brown, Univ. Research Foundation (United States)
Steven R. Bowman, U.S. Naval Research Lab. (United States)
Jennifer K. Hite, U.S. Naval Research Lab. (United States)
Jaime A. Freitas, U.S. Naval Research Lab. (United States)
Francis J. Kub, U.S. Naval Research Lab. (United States)
Charles R. Eddy, U.S. Naval Research Lab. (United States)
Igor Vurgaftman, U.S. Naval Research Lab. (United States)
Jerry R. Meyer, U.S. Naval Research Lab. (United States)
Jacob H. Leach, Kyma Technologies, Inc. (United States)
Kevin Udwary, Kyma Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 9731:
Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications XV
Konstantin L. Vodopyanov; Kenneth L. Schepler, Editor(s)

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