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Proceedings Paper

Single-frequency 571nm VECSEL for photo-ionization of magnesium
Author(s): S. C. Burd; T. Leinonen; J. P. Penttinen; D. T. C. Allcock; D. H. Slichter; R. Srinivas; A. C. Wilson; M. Guina; D. Leibfried; D. J. Wineland
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Paper Abstract

We report the development of an intracavity-frequency-doubled vertical external-cavity surface-emitting laser (VECSEL) emitting at 571 nm for photoionization of magnesium. The laser employs a V-cavity geometry with a gain chip at the end of one cavity arm and a lithium triborate (LBO) crystal for second harmonic generation. The gain chip has a bottom-emitting design with ten GaInAs quantum wells of 7 nm thickness, which are strain compensated by GaAsP. The system is capable of producing up to 2.4 ± 0.1 W (total power in two separate output beams) in the visible. The free-running relative intensity noise was measured to be below −55 dBc/Hz over all frequencies from 1 Hz to 1 MHz. With acoustic isolation and temperature regulation of the laser breadboard, the mode-hop free operation time is typically over 5 hrs. To improve the long-term frequency stability, the laser can be locked to a Doppler-free transition of molecular iodine. To estimate the short-term linewidth, the laser was tuned to the resonance of a reference cavity. From analysis of the on-resonance Hänsch-Couillaud error signal we infer a linewidth of 50 ± 10 kHz. Light at 285 nm is generated with an external build-up cavity containing a β-barium borate (BBO) crystal. The UV light is used for loading 25Mg+ ions in a surface-electrode RF Paul trap. These results demonstrate the applicability and versatility of high-power, single-frequency VECSELs with intracavity harmonic generation for applications in atomic and molecular physics.

Paper Details

Date Published: 2 June 2016
PDF: 8 pages
Proc. SPIE 9734, Vertical External Cavity Surface Emitting Lasers (VECSELs) VI, 973411 (2 June 2016); doi: 10.1117/12.2213398
Show Author Affiliations
S. C. Burd, National Institute of Standards and Technology (United States)
T. Leinonen, Tampere Univ. of Technology (Finland)
J. P. Penttinen, Tampere Univ. of Technology (Finland)
D. T. C. Allcock, National Institute of Standards and Technology (United States)
D. H. Slichter, National Institute of Standards and Technology (United States)
R. Srinivas, National Institute of Standards and Technology (United States)
A. C. Wilson, National Institute of Standards and Technology (United States)
M. Guina, Tampere Univ. of Technology (Finland)
D. Leibfried, National Institute of Standards and Technology (United States)
D. J. Wineland, National Institute of Standards and Technology (United States)


Published in SPIE Proceedings Vol. 9734:
Vertical External Cavity Surface Emitting Lasers (VECSELs) VI
Keith G. Wilcox, Editor(s)

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