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Proceedings Paper

Hybrid silicon-vanadium dioxide electro-optic modulators
Author(s): Kevin J. Miller; Petr Markov; Robert E. Marvel; Richard F. Haglund; Sharon M. Weiss
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Paper Abstract

Small-footprint, low-power devices that can modulate optical signals at THz speeds would transform next-generation onchip photonics. We describe a hybrid silicon–vanadium dioxide (Si-VO2) electro-optic ring resonator modulator as a candidate platform for achieving this performance benchmark. Vanadium dioxide (VO2) is a strongly correlated material exhibiting a semiconductor-to-metal transition (SMT) accompanied by large changes in electrical and optical properties. While VO2 can be switched optically on a sub-picosecond time scale, the ultimate electrical switching speed remains to be determined. In a 5 μm radius Si-VO2 ring resonator, we achieve 1.5 dB modulation in response to a 10 ns square voltage pulse of 2.5 V. In the steady state regime, we report a modulation depth of 10 dB. The larger modulation depth at longer timescales is attributed to a Joule heating contribution. Experimental results, corroborated by FDTD simulations, reveal the relationship between the portion of a VO2 patch undergoing the SMT and the resulting effects on the Si-VO2 device performance. This work indicates that with further reduction of VO2 patch sizes and increase in resonator Q factor, there is promise for the Si-VO2 ring resonator electro-optic modulator as a competitive option for on-chip photonics technology.

Paper Details

Date Published: 14 March 2016
PDF: 7 pages
Proc. SPIE 9752, Silicon Photonics XI, 975203 (14 March 2016); doi: 10.1117/12.2213372
Show Author Affiliations
Kevin J. Miller, Vanderbilt Univ. (United States)
Petr Markov, Vanderbilt Univ. (United States)
Robert E. Marvel, Vanderbilt Univ. (United States)
Richard F. Haglund, Vanderbilt Univ. (United States)
Sharon M. Weiss, Vanderbilt Univ. (United States)

Published in SPIE Proceedings Vol. 9752:
Silicon Photonics XI
Graham T. Reed; Andrew P. Knights, Editor(s)

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