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Proceedings Paper

Broadly tunable DBR-free semiconductor disk laser
Author(s): Zhou Yang; Alexander R. Albrecht; Jeffrey G. Cederberg; Shawn Hackett; Mansoor Sheik-Bahae
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Paper Abstract

We report a DBR-free semiconductor disk lasers centered at 1160 nm with a tuning range of 78 nm, and ongoing effort on our DBR-free SDL centered at 1040 nm. Compared with conventional semiconductor disk lasers, DBR-free SDLs have a broader effective gain bandwidth. In CW operation, 2.5 W output power at 1160 nm and 6 W at 1055 nm were collected from the two lasers without thermal-rollover. Intracavity loss mitigation, currently underway, should improve power scaling and efficiency in these systems.

Paper Details

Date Published: 10 March 2016
PDF: 8 pages
Proc. SPIE 9734, Vertical External Cavity Surface Emitting Lasers (VECSELs) VI, 97340I (10 March 2016); doi: 10.1117/12.2213348
Show Author Affiliations
Zhou Yang, The Univ. of New Mexico (United States)
Alexander R. Albrecht, The Univ. of New Mexico (United States)
Jeffrey G. Cederberg, Sandia National Labs. (United States)
Shawn Hackett, The Univ. of New Mexico (United States)
Air Force Research Lab. (United States)
Mansoor Sheik-Bahae, The Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 9734:
Vertical External Cavity Surface Emitting Lasers (VECSELs) VI
Keith G. Wilcox, Editor(s)

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