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Proceedings Paper

Optical and crystal quality improvement in green emitting InxGa1-xN multi-quantum wells through optimization of MOCVD growth
Author(s): Erkan A. Berkman; Soo Min Lee; Frank Ramos; Eric Tucker; Ronald A. Arif; Eric A. Armour; George D. Papasouliotis
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Paper Abstract

We report on green-emitting In0.18Ga0.82N/GaN multi-quantum well (MQW) structures over a variety of metalorganic chemical vapor deposition (MOCVD) growth conditions to examine the morphology, optical quality, and micron-scale emission properties. The MOCVD growth parameter space was analyzed utilizing two orthogonal metrics which allows comparing and optimizing growth conditions over a wide range of process parameters: effective gas speed, S*, and effective V/III ratio, V/III*. Optimized growth conditions with high V/III, low gas speed, and slow growth rates resulted in improved crystal quality, PL emission efficiency, and micron-scale wavelength uniformity. One of the main challenges in green MQWs with high Indium content is the formation of Indium inclusion type defects due to the large lattice mismatch combined with the miscibility gap between GaN and InN. An effective way of eliminating Indium inclusions was demonstrated by introducing a small fraction of H2 (2.7%) in the gas composition during the growth of high temperature GaN quantum barriers. In addition, the positive effects of employing an InGaN/GaN superlattice (SL) underlayer to crystal quality and micron-scale emission uniformity was demonstrated, which is of special interest for applications such as micro-LEDs.

Paper Details

Date Published: 26 February 2016
PDF: 7 pages
Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 97480K (26 February 2016); doi: 10.1117/12.2213309
Show Author Affiliations
Erkan A. Berkman, Veeco Instruments Inc. (United States)
Soo Min Lee, Veeco Instruments Inc. (United States)
Frank Ramos, Veeco Instruments Inc. (United States)
Eric Tucker, Veeco Instruments Inc. (United States)
Ronald A. Arif, Veeco Instruments Inc. (United States)
Eric A. Armour, Veeco Instruments Inc. (United States)
George D. Papasouliotis, Veeco Instruments Inc. (United States)


Published in SPIE Proceedings Vol. 9748:
Gallium Nitride Materials and Devices XI
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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