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Proceedings Paper

First demonstration of single-mode distributed feedback type-I GaSb cascade diode laser emitting near 2.9 um
Author(s): Mathieu Fradet; Takashi Hosoda; Clifford Frez; Leon Shterengas; Stanley Sander; Siamak Forouhar; Gregory Belenky
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Paper Abstract

We demonstrate GaSb-based laterally-coupled distributed-feedback type-I cascade diode lasers emitting near 2.9 μm as potential sources for OH measurements. The laser heterostructures consist of two GaInAsSb quantum well stages in series separated by GaSb/AlSb/InAs tunnel junction and InAs/AlSb electron injectors. Single-mode emission is generated using second order lateral Bragg grating etched alongside narrow ridge waveguides. The lasers were fabricated into 2-mm-long devices, solder-mounted epi-up on copper submounts, and operate at room temperature. With an anti-reflection coating at the emission facet, the lasers exhibit a typical current threshold of 110 mA at 20 °C and emit more than 14 mW of output power. The Bragg wavelength temperature tuning rate was 0.29 nm/°C.

Paper Details

Date Published: 7 March 2016
PDF: 6 pages
Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97670U (7 March 2016); doi: 10.1117/12.2213224
Show Author Affiliations
Mathieu Fradet, Jet Propulsion Lab. (United States)
Takashi Hosoda, Stony Brook Univ. (United States)
Clifford Frez, Jet Propulsion Lab. (United States)
Leon Shterengas, Stony Brook Univ. (United States)
Stanley Sander, Jet Propulsion Lab. (United States)
Siamak Forouhar, Jet Propulsion Lab. (United States)
Gregory Belenky, Stony Brook Univ. (United States)

Published in SPIE Proceedings Vol. 9767:
Novel In-Plane Semiconductor Lasers XV
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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