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Proceedings Paper

Study of electro-absorption effects in 1300nm In(Ga)As/GaAs quantum dot materials
Author(s): S. A. Sobhani; D. T. Childs; N. Babazadeh; B. J. Stevens; K. Nishi; M. Sugawara; K. Takemasa; R. A. Hogg
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Paper Abstract

We describe a study of electro-absorption effects in high quality 1300nm InAs/GaAs quantum dot (QD) material grown by molecular beam epitaxy. The photocurrent spectra as a function of electric field is investigated and the quantum confined Stark shift of the QD states is compared to reports for various quantum well (QW) systems (GaAs/AlGaAs, InGaAs/GaAs, InGaAsP/InP). We show that the rate of shift of the QD absorption peak is smaller than that of the reported QW systems (~0.1 meV/kVcm-1 c.f. 0.15-0.2 meV/kVcm- 1) and that the QD ground-state absorption is comparatively insensitive to the applied electric field. We observe a strong QD absorption peak at all biases up to avalanche breakdown, which is not observed in previous reports for these QW systems.

Paper Details

Date Published: 4 March 2016
PDF: 12 pages
Proc. SPIE 9742, Physics and Simulation of Optoelectronic Devices XXIV, 97420S (4 March 2016); doi: 10.1117/12.2213187
Show Author Affiliations
S. A. Sobhani, Univ. of Glasgow (United Kingdom)
D. T. Childs, Univ. of Glasgow (United Kingdom)
N. Babazadeh, Univ. of Glasgow (United Kingdom)
B. J. Stevens, The Univ. of Sheffield (United Kingdom)
K. Nishi, QD Laser, Inc. (Japan)
M. Sugawara, QD Laser, Inc. (Japan)
K. Takemasa, QD Laser, Inc. (Japan)
R. A. Hogg, Univ. of Glasgow (United Kingdom)


Published in SPIE Proceedings Vol. 9742:
Physics and Simulation of Optoelectronic Devices XXIV
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

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