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Proceedings Paper

High density semiconductor nanodots by direct laser fabrication
Author(s): Anahita Haghizadeh; Haeyeon Yang
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Paper Abstract

We report a direct method of fabricating high density nanodots on the GaAs(001) surfaces using laser irradiations on the surface. Surface images indicate that the large clumps are not accompanied with the formation of nanodots even though its density is higher than the critical density above which detrimental large clumps begin to show up in the conventional Stranski-Krastanov growth technique. Atomic force microscopy is used to image the GaAs(001) surfaces that are irradiated by high power laser pulses interferentially. The analysis suggests that high density quantum dots be fabricated directly on semiconductor surfaces.

Paper Details

Date Published: 9 March 2016
PDF: 5 pages
Proc. SPIE 9737, Synthesis and Photonics of Nanoscale Materials XIII, 97370K (9 March 2016); doi: 10.1117/12.2213172
Show Author Affiliations
Anahita Haghizadeh, South Dakota School of Mines and Technology (United States)
Haeyeon Yang, South Dakota School of Mines and Technology (United States)


Published in SPIE Proceedings Vol. 9737:
Synthesis and Photonics of Nanoscale Materials XIII
Andrei V. Kabashin; David B. Geohegan; Jan J. Dubowski, Editor(s)

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