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Proceedings Paper

Method of multilayer semiconductor structures cross section preparation for transmission electron microscopy
Author(s): Vladimir Yu. Karasyov; Alexander V. Skornyakov; Mikhail G. Kuznetsov
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Paper Abstract

The transmission electron microscopy (TEM) and high resolution electron microscopy (HREM) are frequently applied for defects and failures ULCI analysis. The preparation of the electron transparent big area flat- parallel semiconductor thin films is needed. The simple and speed automated method of the thin films (less 10 micrometers ) and cross-sections of the multilayer semiconductor structures and devices preparation is described in this paper. It is based on the mechanical and chem- mechanical grinding and polishing of the semiconductor sample with a free abrasive. This method allows to form the flat-parallel and composition uniform thin films with electron transparent area more that 2 mm2 after ion-etching treatment. The original equipment which consists of a local treatment unit, planar treatment unit and wire saw unit is developed.

Paper Details

Date Published: 19 September 1995
PDF: 4 pages
Proc. SPIE 2637, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing, (19 September 1995); doi: 10.1117/12.221316
Show Author Affiliations
Vladimir Yu. Karasyov, Askor Co. (Russia)
Alexander V. Skornyakov, Askor Co. (Russia)
Mikhail G. Kuznetsov, Institute of Molecular Electronics and Mikron (Russia)


Published in SPIE Proceedings Vol. 2637:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing
Anant G. Sabnis; Ivo J. Raaijmakers, Editor(s)

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