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Proceedings Paper

Spectral ellipsometry on patterned wafers
Author(s): Duncan W. Mills; Ronald L. Allen; Walter M. Duncan
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Paper Abstract

Ellipsometry has seen only limited application to the post-deposition pattern etch process despite the fact that physical parameters such as groove width, depth and pitch are as critical to product performance as the more basic thin film parameters traditionally analyzed using ellipsometry. This paper presents initial theoretical results pertaining to modeling the reflectance from a 1D etched pattern on a semiconductor substrate. To analyze the sample's effects upon the incident beam polarization, we formulate the zeroth-order reflection coefficients for the orthogonal p and s polarization states and construct models of ellipsometric parameters (Psi and Delta) for a rectangular-groove surface pattern, emphasizing the effect of groove geometry upon these quantities.

Paper Details

Date Published: 19 September 1995
PDF: 10 pages
Proc. SPIE 2637, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing, (19 September 1995); doi: 10.1117/12.221311
Show Author Affiliations
Duncan W. Mills, Verity Instruments, Inc. (United States)
Ronald L. Allen, Verity Instruments, Inc. (United States)
Walter M. Duncan, Texas Instruments Inc. (United States)


Published in SPIE Proceedings Vol. 2637:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing
Anant G. Sabnis; Ivo J. Raaijmakers, Editor(s)

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