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Proceedings Paper

Keeping 2D materials visible even buried in SoI wafers
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Paper Abstract

In order to protect optoelectronic and mechanical properties of atomically thin layered materials (ATLMs) fabricated over SiO2/Si substrates, a secondary oxide or nitride layer can be capped over. However, such protective capping might decrease ATLMs’ visibility dramatically. Similar to the early studies conducted for graphene, we numerically determine optimum thicknesses both for capping and underlying oxide layers for strongest visibility of monolayer MoS2, MoSe2, WS2, and WSe2 in different regions of visible spectrum. We find that the capping layer should not be thicker than 60 nm. Furthermore the optimum capping layer thickness value can be calculated as a function of underlying oxide thickness, and vice versa.

Paper Details

Date Published: 14 March 2016
PDF: 6 pages
Proc. SPIE 9752, Silicon Photonics XI, 97520R (14 March 2016); doi: 10.1117/12.2213085
Show Author Affiliations
Ergun Simsek, The George Washington Univ. (United States)
Bablu Mukherjee, The George Washington Univ. (United States)

Published in SPIE Proceedings Vol. 9752:
Silicon Photonics XI
Graham T. Reed; Andrew P. Knights, Editor(s)

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